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Chemical vapor deposition of MoS2 films
- Authors
- Mun J.[Mun J.]; Kim D.[Kim D.]; Yun J.[Yun J.]; Shin Y.[Shin Y.]; Kang S.[Kang S.]; Kim T.[Kim T.]
- Issue Date
- 2013
- Citation
- ECS Transactions, v.58, no.7, pp.199 - 202
- Indexed
- SCOPUS
- Journal Title
- ECS Transactions
- Volume
- 58
- Number
- 7
- Start Page
- 199
- End Page
- 202
- ISSN
- 1938-6737
- Abstract
- The MoS2 films were deposited on the titanium nitride (TiN) substrate using chemical vapor deposition (CVD) method. The molybdenum hexacarbonyl (Mo(CO)6) and hydrogen sulfide (H2S) as a precursor and reaction gas, respectively. Preliminary analysis of Mo(CO) 6 which decomposed about 200 degree Celsius under low pressure condition was carried out using Fourier transform infrared spectroscopy (FT-IR). The MoS2 films deposited under the various substrate temperature, chamber pressure, and flow rate were analyzed using scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. The result of Raman spectroscopy shows the bulk MoS2 Raman shift for samples deposited on the specific conditions. © The Electrochemical Society.
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Related Researcher
- KIM, TAE SUNG
- Engineering (Mechanical Engineering)