Synthesis of MoS2 atomic layers using PECVD

Abstract

Graphene has become to be the most spotlighted material because it has remarkable characteristics and advantages. Despite of these advantages, graphene is difficult to apply to semiconductor devices because of low on/off ratio respectively with zero band-gap. However, since molybdenum disulfide (MoS 2) has the band gap of 1.8 eV (single-layer), 1.65 eV (double layer)1 as well as the similar property with graphene, it can apply to semiconductor devices. In this study, MoS2 was deposited by Plasma Enhanced CVD (PECVD) under the process temperature from 150 °C to 300 °C with Mo thin film and H2S gas precursor. Each sample is measured by Raman spectroscopy and it show E2g 1 and A1g mode peak. It is property of material so we can know the number of layer MoS2. © The Electrochemical Society.