Effect of p-type a-SiO:H buffer layer at the interface of TCO and p-type layer in hydrogenated amorphous silicon solar cells

Abstract

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (eta). The cells with buffer layer show higher open circuit voltage (V-oc), fill factor (FF), short circuit current density (J(sc)) and improved blue response with respect to the cell without buffer layer.