The role of buffer layer between TCO and p-layer in improving series resistance and carrier recombination of a-Si:H solar cells
- Authors
- Yoon, K[Yoon, Kichan]; Shin, C[Shin, Chonghoon]; Lee, YJ[Lee, Youn-Jung]; Kim, Y[Kim, Youngkuk]; Park, H[Park, Hyeongsik]; Baek, S[Baek, Seungsin]; Yi, J[Yi, Junsin]
- Issue Date
- Oct-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Amorphous materials; Thin films; Plasma deposition
- Citation
- MATERIALS RESEARCH BULLETIN, v.47, no.10, pp.3023 - 3026
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 47
- Number
- 10
- Start Page
- 3023
- End Page
- 3026
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/64100
- DOI
- 10.1016/j.materresbull.2012.04.102
- ISSN
- 0025-5408
- Abstract
- The properties of the window layer and transparent conducting oxide (TCO)/p interface in silicon based thin-film solar cells are important factors in determining the cell efficiency. As the potential barrier got larger at the interface, the transmission of photo-generated holes were impeded and the recombination of photo-generated electrons diffusing back toward the TCO interface were enhanced leading to a deterioration of the fill factor. In this paper different p-layers were studied. It was found that using p-type hydrogenated amorphous silicon oxide (a-SiOx:H) layer as the window layer along with a 5 nm buffer layer which reduced the barrier at the fluorine doped tin oxide (SnO2:F) TCO/p-layer interface, improved the cell efficiency. a-SiOx :H was used as the buffer layer. With the buffer layer between TCO and p-type a-SiOx:H, the potential barrier dropped from 0.506 eV to 0.472 eV. This lowered barrier results in increased short circuit current density (J(sc)) and fill factor (FF). With the buffer layer, J(sc) increased from 11.9 mA/cm(2) to 13.35 mA/cm(2) and FF increased from 73.22% to 74.91%. (C) 2012 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/64100)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.