Dopant-dependence of one-step metal-induced dopant activation process in silicon
- Authors
- Park, JH[Park, Jin-Hong]; Jung, WS[Jung, Woo-Shik]; Yu, HY[Yu, Hyun-Yong]
- Issue Date
- May-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- One-step MIC; Crystallization; MIDA
- Citation
- CURRENT APPLIED PHYSICS, v.12, no.3, pp.995 - 997
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 12
- Number
- 3
- Start Page
- 995
- End Page
- 997
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/65582
- DOI
- 10.1016/j.cap.2012.01.002
- ISSN
- 1567-1739
- Abstract
- We investigate dopant-dependence of low temperature dopant activation technique in alpha-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p(+) and n(+) Si films by forming NixSiy. Ni not only crystallizes p-type alpha-Si film but also facilitates activation of boron atoms in the alpha-Si during the crystallization at 500 degrees C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type alpha-Si. Finally, p(+)/n and n(+)/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D. (C) 2012 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/65582)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.