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The effect of AlN and flux addition on luminescence properties of Ce doped TAG phosphor for white light emitting diodes
- Authors
- Choi, TY[Choi, T. Y.]; Song, YH[Song, Y. H.]; Lee, HR[Lee, H. R.]; Senthil, K[Senthil, K.]; Masaki, T[Masaki, T.]; Yoon, DH[Yoon, D. H.]
- Issue Date
- 25-Apr-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Optical materials; Photoluminescence; X-ray diffra
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, v.177, no.7, pp.500 - 503
- Indexed
- SCIE
SCOPUS
- Volume
- 177
- Number
- 7
- Start Page
- 500
- End Page
- 503
- ISSN
- 0921-5107
- Abstract
- A series of Ce3+ -activated Tb3Al5O12 green-yellow phosphors were synthesized using solid state reaction method. The X-ray diffraction peaks of the synthesized phosphor were well matched to the Tb3Al5O12 reference peak data. As the addition amount of AlN increase, the relative intensity of diffraction peak increase. But, the addition amount of AlN is over 0.3 mol, the second phase TbAlO3 diffraction peaks increase. When the addition amount of AlN is 0.3 mol, PL shows the highest emission efficiency. These results were explained by the reducing atmosphere made using AlN. The highest emission intensity was observed when the Ce3+ concentration is 0.25 mol. The emission intensity of the Tb2.75Al5O12:Ce-0.25(3+) phosphors were increased by adding BaF2 and KNO3 as a flux. The yellow emitting Tb3Al5O12:Ce3+ phosphors obtained could be applied as white LEDs. (c) 2011 Elsevier B.V. All rights reserved.
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Related Researcher
- YOON, DAE HO
- Engineering (Advanced Materials Science and Engineering)