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Cited 7 time in webofscience Cited 7 time in scopus
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High Resolution 3-D Imaging for characteristics of (111)-Oriented Pb(Zr0.35Ti0.65)O-3 Thin Film by Using Time-of-Flight Secondary Ion Mass Spectrometry and Piezoresponse Force Microscopy

Authors
Shin, HC[Shin, Hyun-Chang]Song, JT[Song, Joon-Tae]
Issue Date
Sep-2011
Keywords
3-D imaging; HR-XRD; PFM; piezoelectric; PZT thin film; TOF-SIMS
Citation
ELECTRONIC MATERIALS LETTERS, v.7, no.3, pp.265 - 270
Indexed
SCIE
SCOPUS
KCI
OTHER
Journal Title
ELECTRONIC MATERIALS LETTERS
Volume
7
Number
3
Start Page
265
End Page
270
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/69153
DOI
10.1007/s13391-011-0916-y
ISSN
1738-8090
Abstract
The properties of Pb(Zr0.35Ti0.65)O-3 (PZT) thin films, similar to 150-nm thick, deposited on an electrode Pt (111)/Ti layer and an SiO2/Si (100) substrate using a chemical sol-gel solution deposition method were investigated by using the high resolution X-ray diffraction (HR-XRD), time-of-flight secondary ion mass spectrometry (TOF-SIMS) and piezoresponse force microscopy (PFM) systems. The in-plane orientations of crystal phase for the PZT film were confirmed with a 3-D pole-figure measurement method. The degree of the c-axis orientation was also measured by 2 theta-w scans and a scan (rocking-curve) measurement. Through 2D and 3D images by TOF-SIMS, we could confirm visually the concentration distribution for the surface and diffusion status to depth direction. Through atomic force microscopy (AFM) techniques, the grain profiles in the local area were characterized in detail. The 3-D images of the phase and magnitude for the polarization behavior along the applying electric field were displayed by using PFM techniques.
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