High Resolution 3-D Imaging for characteristics of (111)-Oriented Pb(Zr0.35Ti0.65)O-3 Thin Film by Using Time-of-Flight Secondary Ion Mass Spectrometry and Piezoresponse Force Microscopy
- Authors
- Shin, HC[Shin, Hyun-Chang]; Song, JT[Song, Joon-Tae]
- Issue Date
- Sep-2011
- Keywords
- 3-D imaging; HR-XRD; PFM; piezoelectric; PZT thin film; TOF-SIMS
- Citation
- ELECTRONIC MATERIALS LETTERS, v.7, no.3, pp.265 - 270
- Indexed
- SCIE
SCOPUS
KCI
OTHER
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 7
- Number
- 3
- Start Page
- 265
- End Page
- 270
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/69153
- DOI
- 10.1007/s13391-011-0916-y
- ISSN
- 1738-8090
- Abstract
- The properties of Pb(Zr0.35Ti0.65)O-3 (PZT) thin films, similar to 150-nm thick, deposited on an electrode Pt (111)/Ti layer and an SiO2/Si (100) substrate using a chemical sol-gel solution deposition method were investigated by using the high resolution X-ray diffraction (HR-XRD), time-of-flight secondary ion mass spectrometry (TOF-SIMS) and piezoresponse force microscopy (PFM) systems. The in-plane orientations of crystal phase for the PZT film were confirmed with a 3-D pole-figure measurement method. The degree of the c-axis orientation was also measured by 2 theta-w scans and a scan (rocking-curve) measurement. Through 2D and 3D images by TOF-SIMS, we could confirm visually the concentration distribution for the surface and diffusion status to depth direction. Through atomic force microscopy (AFM) techniques, the grain profiles in the local area were characterized in detail. The 3-D images of the phase and magnitude for the polarization behavior along the applying electric field were displayed by using PFM techniques.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
- Information and Communication Engineering > Information and Communication Engineering > 1. Journal Articles
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