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Temperature of a Semiconducting Substrate Exposed to an Inductively Coupled Plasma
- Authors
- Lim, YD[Lim, Yeong-Dae]; Lee, DY[Lee, Dae-Yeong]; Yoo, WJ[Yoo, Won Jong]; Ko, HS[Ko, Han Seo]; Lee, SH[Lee, Soo-Hong]
- Issue Date
- Aug-2011
- Keywords
- Computational fluid dynamics; Heat transfer; Inductively coupled plasma; Simulation; Surface temperature; Thermocouple
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.2, pp.262 - 270
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 59
- Number
- 2
- Start Page
- 262
- End Page
- 270
- ISSN
- 0374-4884
- Abstract
- The temperature of a semiconducting Si substrate surface exposed to an Ar plasma was monitored in-situ by using a homemade thermocouple system at inductively coupled plasma (ICP) powers rangnig from 300 to 600 W. The temperature of the Si substrate was also simulated by using computational fluid dynamics (CFD). The substrate surface temperature was analyzed experimentally and theoretically as a function of ICP power and time. In addition, a simulation of the temperature distribution as a function of ICP power and location was performed by using CFD for cross sections of the Si substrate and the electrode chuck underneath.
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Related Researcher
- KO, HAN SEO
- Engineering (Mechanical Engineering)