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Cited 2 time in webofscience Cited 3 time in scopus
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Effects of Ceria Abrasive Particle Size Distribution below Wafer Surface on In-Wafer Uniformity during Chemical Mechanical Polishing Processing

Authors
Kim, H[Kim, Hojoong]Yang, JC[Yang, Ji Chul]Kim, M[Kim, Myungjoon]Oh, DW[Oh, Dong-won]Lee, CG[Lee, Chil-Gee]Kim, SY[Kim, Sang-Yong]Kim, T[Kim, Taesung]
Issue Date
2011
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.6, pp.H635 - H640
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume
158
Number
6
Start Page
H635
End Page
H640
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/71468
DOI
10.1149/1.3562559
ISSN
0013-4651
Abstract
In this study, the abrasive size distribution of ceria-based slurry below wafer and its effect on in-wafer uniformity were examined. Based on our observation, the abrasive size varies depending on the location on the wafer. Hence process parameters such as pad surface morphology and slurry viscosity were thoroughly investigated to observe their effect on the distribution on the wafer surface. It was found that the small size particles were considerably reduced near the center location of the wafer surface during the pad lifetime with reduced slurry viscosity and high polishing pressure. Hence, the contact conditions and the characteristic of fluid should be simultaneously considered in order to obtain the stable in-wafer uniformity. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3562559] All rights reserved.
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Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles
Information and Communication Engineering > Department of Semiconductor Systems Engineering > 1. Journal Articles
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