Effects of Ceria Abrasive Particle Size Distribution below Wafer Surface on In-Wafer Uniformity during Chemical Mechanical Polishing Processing
- Authors
- Kim, H[Kim, Hojoong]; Yang, JC[Yang, Ji Chul]; Kim, M[Kim, Myungjoon]; Oh, DW[Oh, Dong-won]; Lee, CG[Lee, Chil-Gee]; Kim, SY[Kim, Sang-Yong]; Kim, T[Kim, Taesung]
- Issue Date
- 2011
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.6, pp.H635 - H640
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 158
- Number
- 6
- Start Page
- H635
- End Page
- H640
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/71468
- DOI
- 10.1149/1.3562559
- ISSN
- 0013-4651
- Abstract
- In this study, the abrasive size distribution of ceria-based slurry below wafer and its effect on in-wafer uniformity were examined. Based on our observation, the abrasive size varies depending on the location on the wafer. Hence process parameters such as pad surface morphology and slurry viscosity were thoroughly investigated to observe their effect on the distribution on the wafer surface. It was found that the small size particles were considerably reduced near the center location of the wafer surface during the pad lifetime with reduced slurry viscosity and high polishing pressure. Hence, the contact conditions and the characteristic of fluid should be simultaneously considered in order to obtain the stable in-wafer uniformity. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3562559] All rights reserved.
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Collections - Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles
- Information and Communication Engineering > Department of Semiconductor Systems Engineering > 1. Journal Articles
- Engineering > School of Mechanical Engineering > 1. Journal Articles
- Software > Software > 1. Journal Articles
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