Characteristics of hafnium silicate films deposited on Si by atomic layer deposition process
- Authors
- Lee J.-C.[Lee J.-C.]; Kim K.-S.[Kim K.-S.]; Jeong S.-W.[Jeong S.-W.]; Roh Y.[Roh Y.]
- Issue Date
- 2011
- Keywords
- Annealing; Atomic layer deposition; HfSixOy; High-k; Interfacial layer regrowth; Metal-oxide-semiconductor capacitor; O2
- Citation
- Transactions on Electrical and Electronic Materials, v.12, no.3, pp.127 - 130
- Indexed
- SCOPUS
KCI
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 12
- Number
- 3
- Start Page
- 127
- End Page
- 130
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/72139
- DOI
- 10.4313/TEEM.2011.12.3.127
- ISSN
- 1229-7607
- Abstract
- We investigated the effects of O2 annealing (i.e., temperature and time) on the characteristics of hafnium silicate (HfSixOy) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of HfSixOy films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness. © 2011 KIEEME. All rights reserved.
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Collections - Information and Communication Engineering > Information and Communication Engineering > 1. Journal Articles
- Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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