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Nanocrystalline-Silicon Thin-Film Nonvolatile Memory Devices for Display Applications
- Issue Date
- Sep-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Fowler-Nordheim (FN); nanocrystalline silicon (nc-Si); nonvolatile memory (NVM); oxynitride-nitride-oxide (OnNO); system-on-glass (SOG)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.981 - 983
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 31
- Number
- 9
- Start Page
- 981
- End Page
- 983
- ISSN
- 0741-3106
- Abstract
- Nanocrystalline-silicon (nc-Si) nonvolatile memory (NVM) devices with oxynitride-nitride-oxide stack structures were fabricated with directly deposited nanocrystalline-silicon thin films using a low-temperature process. The fabricated bottom-gate nc-Si NVM devices have a wide memory window with a low operating voltage during programming and erasing due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 67% between the programming and erasing states. These results demonstrate that these low-priced nc-Si NVM devices have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)