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Reduction of Electrical Hysteresis in Cyclically Bent Organic Field Effect Transistors by Incorporating Multistack Hybrid Gate Dielectrics
- Authors
- Seol, YG[Seol, Y. G.]; Park, JS[Park, J. S.]; Tien, NT[Tien, N. T.]; Lee, NE[Lee, N. -E.]; Lee, DK[Lee, D. K.]; Lee, SC[Lee, S. C.]; Kim, YJ[Kim, Y. J.]; Lee, CS[Lee, C. -S.]; Kim, H[Kim, H.]
- Issue Date
- 2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.11, pp.H1046 - H1050
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 157
- Number
- 11
- Start Page
- H1046
- End Page
- H1050
- ISSN
- 0013-4651
- Abstract
- We have fabricated flexible organic field effect transistors (OFETs) on polyimide substrate with low hysteresis and low leakage current under repetitive bending. The insertion of an ultrathin atomic-layer-deposited Al(2)O(3) layer in between spin-coated poly-4-vinyl phenol organic layers in a multistack hybrid gate dielectric for OFETs significantly improved stability in the electrical hysteresis during cyclic bending. The observed hysteresis stability for cyclically bent multistack hybrid OFET devices was attributed to efficient blocking of charges injected from the gate electrode due to improved mechanical stability. Cyclically bent samples showed no cracking for thinner Al(2)O(3) layers in the multistack hybrid gate dielectrics. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489944] All rights reserved.
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Related Researcher
- LEE, NAE EUNG
- Engineering (Advanced Materials Science and Engineering)