Surface and electrical properties of organic-inorganic hybrid structure as gate insulator to organic thin film transistor
- Authors
- Park, YS[Park, Yong Seob]; Cho, SJ[Cho, Sang-Jin]; Boo, JH[Boo, Jin-Hyo]; Hong, B[Hong, Byungyou]
- Issue Date
- 30-Nov-2009
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- APPLIED SURFACE SCIENCE, v.256, no.4, pp.1023 - 1027
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 256
- Number
- 4
- Start Page
- 1023
- End Page
- 1027
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/76516
- DOI
- 10.1016/j.apsusc.2009.05.132
- ISSN
- 0169-4332
- Abstract
- Carbon-based OTFT devices were fabricated using a plasma process for the gate electrode and gate insulators. A nanocrystalline carbon (nc-C) film was used as the gate electrode, and three different layers, cyclohexene, diamond-like carbon (DLC), and cyclohexene/DLC (hybrid insulator), were used as the gate insulator. The surface and electrical properties of the three different gate insulators on the nc-C gate electrode were investigated using the SPM method, and the leakage current density and dielectric constant of the metal-insulator-metal (MIM) structures with three different insulator layers were evaluated. The hybrid insulator layer had a very smooth surface, approximately 0.2 nm, a uniform surface without defects, and good adhesion between the layers. Overall, it is believed that the hybrid insulator lead to a decrease in the electrical leakage current and an improvement in the device performance. (C) 2009 Elsevier B.V. All rights reserved.
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- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
- Science > Department of Chemistry > 1. Journal Articles
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