Electrical and optical properties of 12CaO center dot 7Al(2)O(3) electride doped indium tin oxide thin film deposited by RF magnetron co-sputtering
- Authors
- Tai, PH[Tai, P. H.]; Jung, CH[Jung, C. H.]; Kang, YK[Kang, Y. K.]; Yoon, DH[Yoon, D. H.]
- Issue Date
- 1-Oct-2009
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Transparent conducting oxides (TCOs); C12A7 electride; TEOLEDs
- Citation
- THIN SOLID FILMS, v.517, no.23, pp.6294 - 6297
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 517
- Number
- 23
- Start Page
- 6294
- End Page
- 6297
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/76779
- DOI
- 10.1016/j.tsf.2009.02.068
- ISSN
- 0040-6090
- Abstract
- 12CaO center dot 7Al(2)O(3) electride (C12A7:e(-)) doped indium tin oxide (ITO) (ITO:C12A7:e(-)) thin films were fabricated on a glass substrate by an RF magnetron co-sputtering system with increasing number of C12A7:e(-) chips (from 1 to 7) and at various oxygen partial pressure ratios. The optical transmittance of the ITO:C12A7:e(-) thin film was higher than 70% in the visible wavelength region. In the electrical properties of the thin film, a decrease of the carrier concentration from 2.6 x 10(20) cm(-3) to 2.1 x 10(18) cm(-3) and increase of the resistivity from 1.4 x 10(-3) Omega cm to 4.1 x 10(-1) Omega cm were observed with increasing number of C12A7:e- chips and oxygen partial pressure ratios. It was also observed that the Hall mobility was decreased from 17.27 cm(2).V-1.s(-1) to 5.13 cm(2).V-1-.s(-1). The work function of the ITO thin film was reduced by doping it with C12A7:e(-). (C) 2009 Elsevier B.V. All rights reserved.
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Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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