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Electrical and optical studies of transparent conducting ZnO:Al thin films by magnetron dc sputtering

Authors
Dao, VA[Dao, Vinh Ai]Tran, L[Tran Le]Tuan, T[Tuan Tran]Huu, CN[Huu Chi Nguyen]Kim, K[Kim, Kyunghae]Lee, J[Lee, Jaehyeong]Jung, S[Jung, Sungwook]Lakshminarayan, N[Lakshminarayan, N.]Yi, J[Yi, Junsin]
Issue Date
Oct-2009
Publisher
SPRINGER
Keywords
Transparent conductive oxide films; Energetic oxygen atoms; ZnO:Al
Citation
JOURNAL OF ELECTROCERAMICS, v.23, no.2-4, pp.356 - 360
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF ELECTROCERAMICS
Volume
23
Number
2-4
Start Page
356
End Page
360
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/76880
DOI
10.1007/s10832-008-9466-6
ISSN
1385-3449
Abstract
Transparent conducting aluminium-doped Zinc oxide (ZnO:Al) films have been deposited on glass substrates by magnetron dc sputtering using a ceramic target (ZnO with 2 wt% Al2O3). The dependence of the electrical and optical properties of these films on substrate temperature, sputtering pressure of Ar and location of substrates were investigated in detail. Target is perpendicular with substrate and we controlled the distance 'x' of target and substrate. Optimized films with resistivity of 3.7 x 10(-4) Omega cm, an average transmission in the visible range (300-800 nm) of greater than 85% and the reflectance in the infrared range being greater than 85% have been formed. Substrate temperature, distance 'x', and working pressure are optimized for lower resistivity and high concentration of carriers.
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