Mechanism and CHARM2 Evaluation of P-Channel Metal Oxide Semiconductor Threshold Voltage Drop during High Density Plasma Heat-up Process
- Authors
- Kim, DH[Kim, Dong-Hwan]; Lee, J[Lee, Jeongyun]; Kim, MS[Kim, Min-Sung]; Tokashiki, K[Tokashiki, Ken]; Shin, K[Shin, Kyoungsub]; Han, W[Han, Woosung]; Kang, HI[Kang, Hyun-Il]; Kim, EK[Kim, Eung-Kwon]; Song, JT[Song, Joon-Tae]
- Issue Date
- Aug-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 48
- Number
- 8
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/77334
- DOI
- 10.1143/JJAP.48.08HF02
- ISSN
- 0021-4922
- Abstract
- Plasma damage during the plasma deposition process is one of the most critical device characteristic issues facing complementary metal oxide semiconductor field effect transistor (CMOSFET) technology. In this paper, the CHARM2 monitoring system is used to evaluate UV damage and plasma charging damage during a high density plasma chemical vapor deposition (HDP-CVD) heat-up process. As a result, the amount of UV damage and negative charging damage is increased as the HDP-CVD heat-up process source power is increased. The main cause of P-channel metal oxide semiconductor field effect transistor (PMOSFET) threshold voltage drop is UV photon facilitated gate oxide electron trapping at the gate oxide and substrate P-channel interface during the HDP-CVD heat-up process. In N-channel metal oxide semiconductor field effect transistor (NMOSFET), when negative gate voltage stress is increased, gate oxide energy bend is flattened. Electrons cannot be trapped at the gate oxide and substrate N-channel interface. Therefore, the NMOSFET threshold voltage is constant during the HDP-CVD heat-up plasma process. (C) 2009 The Japan Society of Applied Physics
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- Appears in
Collections - Engineering > School of Chemical Engineering > 1. Journal Articles
- Information and Communication Engineering > Information and Communication Engineering > 1. Journal Articles
- Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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