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Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel
- Authors
- Nguyen, TN[Nguyen, Thanh Nga]; Nguyen, VD[Nguyen, Van Duy]; Jung, S[Jung, Sungwook]; Yi, J[Yi, Junsin]
- Issue Date
- 15-Jul-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Metal-induced crystallization (MIC); Nickel; Raman spectrum; Amorphous silicon; Polycrystalline; Residual stress
- Citation
- APPLIED SURFACE SCIENCE, v.255, no.19, pp.8252 - 8256
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 255
- Number
- 19
- Start Page
- 8252
- End Page
- 8256
- ISSN
- 0169-4332
- Abstract
- Raman scattering analysis is used to study the residual stress in metal-induced crystallized amorphous silicon thin film. The influence of the crystallization parameters on thin film properties is investigated as a function of annealing temperature, annealing time, and nickel top-seed-layer thickness. Thin films produced under optimal annealing conditions are measured to have crystallization efficiency of about 98%, which is full crystallization. Residual stress analysis reveals clear stress reduction with prolonged annealing time and Ni capping layer thickness. A very low tensile stress of about 87 MPa is achieved. The relationships between optimal crystallization temperature, crystallization time, and Ni-layer thickness are described. (C) 2009 Elsevier B. V. All rights reserved.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)