Advanced Solid-Phase Crystallization of Amorphous Silicon on a Glass Substrate
- Authors
- Nguyen, TN[Nguyen, Thanh Nga]; Jung, S[Jung, Sungwook]; Yi, J[Yi, Junsin]
- Issue Date
- Jun-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Amorphous silicon (a-Si); Advanced solid-phase crystallization (a-SPC); Solid-phase crystallization (SPC); UV-Vis spectrum; Crystalline fraction
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.6, pp.2367 - 2372
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 54
- Number
- 6
- Start Page
- 2367
- End Page
- 2372
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/77699
- ISSN
- 0374-4884
- Abstract
- We report the crystallization of an amorphous silicon (a-Si) film by using advanced solid-phase crystallization (a-SPC). Solid-phase crystallization (SPC) is the most common method to obtain polycrystalline silicon (poly-Si). However, SPC requires a long annealing time to change from the a-Si phase to the poly-Si phase. The a-SPC method, which employs a high annealing temperature (above 700 degrees C) but a short annealing time, is investigated to overcome this disadvantage. After dehydrogenating at 450 degrees C for 2 hours, the a-Si films on Corning EAGLE glass substrates are annealed by rapid thermal processing (RTP). The UV-Vis spectrum reveals that the poly-Si appears for heat-treatment at 750 degrees C for 3 seconds. When the annealing time is increased until the critical point, at which the glass substrate bends, the crystalline fraction, as well as the quality of the poly-Si layer, improves. Raman spectroscopy confirms these results. The highest crystalline fraction is 96 % for an annealing time of 5 minutes.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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