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Growth of 3C-SiC nanowires on nickel coated Si(100) substrate using dichloromethylvinylsilane and diethylmethylsilane by MOCVD method

Authors
Hyun, J.-S.[Hyun, J.-S.]Nam, S.-H.[Nam, S.-H.]Kang, B.-C.[Kang, B.-C.]Boo, J.-H.[Boo, J.-H.]
Issue Date
2009
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v.6, no.4, pp.810 - 812
Journal Title
Physica Status Solidi (C) Current Topics in Solid State Physics
Volume
6
Number
4
Start Page
810
End Page
812
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/79036
DOI
10.1002/pssc.200880621
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