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Electrical resistivities and TCR behavior of co-sputtered TaN-(Ag, Cu) nanocomposites

Authors
Park, I.-S.[Park, I.-S.]Na, S.-H.[Na, S.-H.]Kim, J.-S.[Kim, J.-S.]Lim, S.-K.[Lim, S.-K.]Kim, T.-S.[Kim, T.-S.]Suh, S.-J.[Suh, S.-J.]Lee, J.-W.[ Lee, J.-W.]Yul-Kyo, C.[ Yul-Kyo, C.]Oh, Y.-S.[ Oh, Y.-S.]
Issue Date
Jun-2009
Publisher
KOREAN PHYSICAL SOC
Keywords
Embedded resistor; Nanocomposites; TaN
Citation
Journal of the Korean Physical Society, v.54, no.6, pp.2323 - 2326
Indexed
SCIE
SCOPUS
KCI
Journal Title
Journal of the Korean Physical Society
Volume
54
Number
6
Start Page
2323
End Page
2326
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/79282
DOI
10.3938/jkps.54.2323
ISSN
0374-4884
Abstract
The motivation for this study arose from the potential to control electrical properties, such as the resistivity and the TCR, by fabricating TaN-metal nanocomposite films with electron scattering by nanoparticles in the tantalum-nitride matrix. The present work investigated the correlation between the electrical properties and the microstructures of the nanocomposite films. Co-deposited TaN-Ag and TaN-Cu nanocomposite thin films under a 55 % N 2partial pressure at a Ta power density of 8.78 W/cm 2 and at various Ag and Cu power densities were generated.
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