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Electrical properties of Pb(Zr,Ti)O-3 films prepared on ITO glass

Authors
Hwang, HS[Hwang, Hyun-Suk]Park, Y[Park, Young]Choi, WS[Choi, Won Seok]
Issue Date
Dec-2008
Publisher
ELSEVIER SCIENCE BV
Keywords
Lead zirconate titanate thin film; Indium tin oxide coated glass; Remanent polarization; Fatigue
Citation
MICROELECTRONIC ENGINEERING, v.85, no.12, pp.2456 - 2458
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONIC ENGINEERING
Volume
85
Number
12
Start Page
2456
End Page
2458
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/80102
DOI
10.1016/j.mee.2008.09.004
ISSN
0167-9317
Abstract
Pb(Zr,Ti)O-3 thin films were successfully prepared on a Pt bottom electrode with indium tin oxide coated glass substrates using RF magnetron sputtering. Use of the indium tin oxide coated glass substrate reduced the fatigue characteristics and provided for excellent crystallization of the Pb(Zr,Ti)O-3 thin films. The polarization versus fatigue characteristics showed 10% degradation after 10(9) cycles. These results indicate that Pt/indium tin oxide double electrodes can be improved both in terms of fatigue and ferroelectric properties through the use of Pb(Zr,Ti)O-3 thin films on glass substrates, resulting in better performance than metal electrodes. (C) 2008 Elsevier B.V. All rights reserved.
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