Electrical properties of Pb(Zr,Ti)O-3 films prepared on ITO glass
- Authors
- Hwang, HS[Hwang, Hyun-Suk]; Park, Y[Park, Young]; Choi, WS[Choi, Won Seok]
- Issue Date
- Dec-2008
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Lead zirconate titanate thin film; Indium tin oxide coated glass; Remanent polarization; Fatigue
- Citation
- MICROELECTRONIC ENGINEERING, v.85, no.12, pp.2456 - 2458
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 85
- Number
- 12
- Start Page
- 2456
- End Page
- 2458
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/80102
- DOI
- 10.1016/j.mee.2008.09.004
- ISSN
- 0167-9317
- Abstract
- Pb(Zr,Ti)O-3 thin films were successfully prepared on a Pt bottom electrode with indium tin oxide coated glass substrates using RF magnetron sputtering. Use of the indium tin oxide coated glass substrate reduced the fatigue characteristics and provided for excellent crystallization of the Pb(Zr,Ti)O-3 thin films. The polarization versus fatigue characteristics showed 10% degradation after 10(9) cycles. These results indicate that Pt/indium tin oxide double electrodes can be improved both in terms of fatigue and ferroelectric properties through the use of Pb(Zr,Ti)O-3 thin films on glass substrates, resulting in better performance than metal electrodes. (C) 2008 Elsevier B.V. All rights reserved.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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