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A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET
- Issue Date
- Nov-2008
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v.52, no.11, pp.1773 - 1777
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 52
- Number
- 11
- Start Page
- 1773
- End Page
- 1777
- ISSN
- 0038-1101
- Abstract
- A time-dependent technique is developed for carrier recombination-generation (R-G) lifetimes measurement in the silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET). One gate is kept in strong accumulation, and the other gate is kept in strong inversion. A ramp voltage is applied to the accumulated gate, and the drain current transients are monitored for both carrier R-G lifetimes extraction. The time-dependent technique shows an extensive applicability, and its credibility is proved by simulation. (C) 2008 Elsevier Ltd. All rights reserved.
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