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X-ray photoelectron spectroscopic study of Ge(2)Sb(2)Te(5) etched by fluorocarbon inductively coupled plasmas
- Authors
- Kang, SK[Kang, S. -K.]; Oh, JS[Oh, J. S.]; Park, BJ[Park, B. J.]; Kim, SW[Kim, S. W.]; Lim, JT[Lim, J. T.]; Yeom, GY[Yeom, G. Y.]; Kang, CJ[Kang, C. J.]; Min, GJ[Min, G. J.]
- Issue Date
- 28-Jul-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 4
- ISSN
- 0003-6951
- Abstract
- X- ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge(2)Sb(2)Te(5) (GST) etched by fluorocarbon gases at different F/ C ratios. When blank GST was etched, the gas with a higher F/ C ratio produced a thinner C - F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/ C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C - F layer. (c) 2008 American Institute of Physics.
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