Etching characteristics and application of physical-vapor-deposited amorphous carbon for multilevel resist
- Authors
- Kim, HT[Kim, H. T.]; Kwon, BS[Kwon, B. S.]; Lee, NE[Lee, N. -E.]; Park, YS[Park, Y. S.]; Cho, HJ[Cho, H. J.]; Hong, B[Hong, B.]
- Issue Date
- Jul-2008
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.26, no.4, pp.861 - 864
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 26
- Number
- 4
- Start Page
- 861
- End Page
- 864
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/81118
- DOI
- 10.1116/1.2936231
- ISSN
- 0734-2101
- Abstract
- For the fabrication of a multilevel resist (MLR) based on a very thin, physical-vapor-deposited (PVD) amorphous carbon (a-C) layer, the etching characteristics of the PVD a-C layer with a SiOx hard mask were investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in O-2/N-2/Ar plasmas: high-frequency/low-frequency combination (f(HF)/f(LF)), HF/LF power ratio (P-HF/P-LF), and O-2 and N-2 flow rates. The very thin nature of the a-C layer helps to keep the aspect ratio of the etched features low. The etch rate of the PVD a-C layer increased with decreasing fHF/fLF combination and increasing P-LF and was initially increased but then decreased with increasing N2 flow rate in O-2/N-2/Ar plasmas. The application of a 30 nm PVD a-C layer in the MLR structure of ArF PR/BARC/SiOx/PVD a-C/TEOS oxide supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the TEOS-oxide layer. (C) 2008 American Vacuum Society.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
- Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/81118)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.