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Cited 13 time in webofscience Cited 14 time in scopus
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ATOMIC HYDROGEN-DRIVEN SIZE CONTROL OF CATALYTIC NANOPARTICLES FOR SINGLE-WALLED CARBON NANOTUBE GROWTH

Authors
Jeong, HJ[Jeong, Hee Jin]Eude, L[Eude, Laurent]Gowtham, M[Gowtham, Manoharan]Marquardt, B[Marquardt, Bernd]Lim, SH[Lim, Sung Hun]Enouz, S[Enouz, Shaima]Cojocaru, CS[Cojocaru, Costel Sorin]Park, KA[Park, Kyung Ah]Lee, YH[Lee, Young Hee]Pribat, D[Pribat, Didier]
Issue Date
Jun-2008
Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
Keywords
Single-walled carbon nanotube; atomic hydrogen; catalytic nanoparticle; chemical vapor deposition
Citation
NANO, v.3, no.3, pp.145 - 153
Indexed
SCIE
SCOPUS
KCI
OTHER
Journal Title
NANO
Volume
3
Number
3
Start Page
145
End Page
153
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/81286
DOI
10.1142/S1793292008000939
ISSN
1793-2920
Abstract
The effects of an atomic hydrogen (H(at)) pretreatment of the catalyst layer on the low temperature growth of single-walled carbon nanotubes (SWCNTs) have been investigated using a modified catalytic chemical vapor deposition system. Well-defined and isolated individual Fe nanoparticles as a catalyst are successfully formed on the defects with high trapping energy which are created on the Al(2)O(3) surface by H(at) pretreatment, yielding highly dense SWCNTs. The pretreatment mechanism of H(at), compared to H(2), is also discussed. It was also found that the quality of SWCNTs can be enhanced when H(at) is flowed with CH(4) during nanotubes growth at low temperature. In this case, the undesired carbon products and defects on catalyst seeds and nanotube walls can be selectively removed by H(at). Therefore it is essential to use H(at) in the pretreatment stage for increasing catalytic activity and to keep the size of nanoparticles in the nm range. H(at) can also be employed in growth stage for enhancing SWCNTs quality and density at low temperature.
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Science > Department of Physics > 1. Journal Articles
Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles

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