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Fabrication of Ino.52A1o.48As/In o.53Gao.47As p-HEMT utilizing Ne-based atomic layer etching
- Authors
- Kim, T.-W.[Kim, T.-W.]; Shin, S.H.[ Shin, S.H.]; Park, S.D.[Park, S.D.]; Yeom, G.Y.[Yeom, G.Y.]; Jang, J.-H.[ Jang, J.-H.]; Song, J.-I.[ Song, J.-I.]
- Issue Date
- 2008
- Keywords
- Atomic layer etching (ALET); Ion/IoFF ratio; Peudomorphic high electron mobility transistor (p-HEMT)
- Citation
- Conference Proceedings - International Conference on Indium Phosphide and Related Materials
- Indexed
- SCOPUS
- Journal Title
- Conference Proceedings - International Conference on Indium Phosphide and Related Materials
- ISSN
- 1092-8669
- Abstract
- The characteristics of 0.15 μm Ino.52A1o.48As/ Ino.53Gao.47As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Nebased atomic layer etching (ALET) technology and the Arbased conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using theALET exhibited improved device performance including trasconductance (GM=I.38 S/mm), IoN/IoFF ratio (1.18X 104), and cutoff frequency (fT=233 GHz), mainly ue to the extremely low plasma-induced damage of the ALET to the Schottky gate area.
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