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Geometrically Enhanced Graphene Tunneling Diode With Lateral Nano-Scale Gap
- Authors
- Yang, JH[Yang, Jae Hoon]; Shin, JH[Shin, Jeong Hee]; Kim, S[Kim, Seunguk]; Pyo, G[Pyo, Goeun]; Jang, AR[Jang, A-Rang]; Yang, HW[Yang, Hyoung Woo]; Kang, DJ[Kang, Dae Joon]; Jang, JE[Jang, Jae Eun]
- Issue Date
- Nov-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Tunneling; Graphene; Electric fields; Geometry; Schottky diodes; Electrodes; Fabrication; Lateral structure; graphene tunneling diode; asymmetric geometry; electric field confinement
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1840 - 1843
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 40
- Number
- 11
- Start Page
- 1840
- End Page
- 1843
- ISSN
- 0741-3106
- Abstract
- The implications of graphene for tunneling diodes have attracted great attention due to the excellent electrical properties of graphene. Most graphene-based tunneling diodes have been fabricated with a vertical structure. They are limited by a complicated fabrication process. Herein, we present a lateral-structured graphene tunneling diode with asymmetric geometry. The asymmetric geometry induces strong electric field enhancement leading electronic band bending. Therefore, the asymmetry of the graphene tunneling is improved as much as 2.5 times. The lateral device structure opens up possibilities to apply graphene tunneling diodes in future electronic circuits.
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