Mechanically flexible low-leakage nanocomposite gate dielectrics for flexible organic thin-film transistors
- Authors
- Noh, HY[Noh, H. Y.]; Seol, YG[Seol, Y. G.]; Kim, SI[Kim, S. I.]; Leez, NE[Leez, N. -E.]
- Issue Date
- 2008
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.8, pp.H218 - H221
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 11
- Number
- 8
- Start Page
- H218
- End Page
- H221
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/83329
- DOI
- 10.1149/1.2936266
- ISSN
- 1099-0062
- Abstract
- Improvement of dispersion of the Al(2)O(3) nanoparticles in the poly(4-vinyl phenol) (PVP) matrix by coupling agent treatment resulted in a reduction of the leakage current density of the nanocomposite gate dielectric in organic thin-film transistor (OTFT) devices, which, in turn, improved the device performance compared to that of the device with the pure PVP gate dielectric. Under repetitive cyclic bending, the leakage current density of the nanocomposite layer was not changed, while that of the PVP layer was increased significantly. The nanocomposite gate dielectric layer provided the flexible OTFT device with improved mechanical and electrical stabilities.
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- Appears in
Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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