Synthesis and characterization of SnO2: Sb film by dc magnetron sputtering method for applications to transparent electrodes

Abstract

Transparent conducting Sb-doped SnO2 (antimony-doped tin oxide: ATO) films were prepared on Corning glass substrate by dc magnetron sputtering using SnO2 mixed with 6 wt.% of Sb at various substrate temperatures of 100-600 degrees C and dc powers of 100-200 W. All ATO films were deposited with a thickness of 300 nm. X-ray defractometer (XRD) measurements showed the ATO films to be crystallized with strong (101) orientation as substrate temperature increases over 300 degrees C. Grain size was calculated from the XRD spectra using the Scherrer equation. The ATO film in this work had a resistivity of order 10(-3) and carrier concentration of order 10(20).