Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride (SiOxNy) as tunneling layer on glass

Abstract

A nonvolatile semiconductor memory (NVSM) device with a metal-oxide-nitride-oxynitride-polysilicon (MONOS) structure on a rough polysilicon (poly-Si) surface was fabricated using a low-temperature process and poly-Si thin film transistor (TFT) technology on glass. For the fabrication of the NVSM device on glass, plasma-assisted oxynitridation was carried out using nitrous oxide (N2O) as a reactive gas, due to the very rough surface of the poly-Si on glass annealed using an excimer laser. The ultrathin SiOxNy films obtained using the N2O plasma have a very uniform distribution on poly-Si and similar contents of oxygen and nitrogen in the peaks and valleys of the grains. The NVSM devices having a MONOS structure with a tunneling layer of ultrathin SiOxNy on glass have suitable switching and charge retention characteristics for data storage. The results demonstrate that the NVSM device made using low-temperature poly-Si TFT technology on glass reported in this paper can be used in various types of display devices. (C) 2007 American Institute of Physics.