Detailed Information
Cited 11 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Study of a thin Al2O3/TaN absorber stack on Ru-capped multilayers
- Authors
- Kim, TG[Kim, Tae Geun]; Kim, LH[Kim, Byung Hun]; Kang, IY[Kang, In-Yong]; Chung, YC[Chung, Yong-Chae]; Ahn, J[Ahn, Jinho]; Lee, SY[Lee, Seung Yoon]; Park, IS[Park, In-Sung]; Kim, CY[Kim, Chung Yong]; Lee, NE[Lee, Nae-Eung]
- Issue Date
- Dec-2006
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, pp.S721 - S725
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 49
- Start Page
- S721
- End Page
- S725
- ISSN
- 0374-4884
- Abstract
- The glancing incident angle of an extreme ultraviolet lithography (EUVL) system requires minimal thickness of absorber patterns to suppress the shadow effect. High etch selectivity and low EUV reflectance can be obtained by a TaN absorber with a Ru buffer layer, but this structure does not offer enough DUV contrast (absorber/reflector) for inspection. A 20-nm-thick Al2O3 anti-reflection coating on top of 27-nm-TaN/2-nm-Ru is proposed as one of the optimum absorber stacks, which can give high EUV and DUV contrast with the thinnest structure ever reported.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- LEE, NAE EUNG
- Engineering (Advanced Materials Science and Engineering)