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Characteristics of a multilayer SiOx(CH)(y)N-z film deposited by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane/Ar/N2O
- Authors
- Lee, JH[Lee, June Hee]; Jeong, CH[Jeong, Chang Hyun]; Lim, JT[Lim, Jong Tae]; Zavaleyev, VA[Zavaleyev, Viktor A.]; Kyung, SJ[Kyung, Se Jin]; Yeom, GY[Yeom, Geun Young]
- Issue Date
- Oct-2006
- Publisher
- INST PURE APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.10B, pp.8430 - 8434
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
- Volume
- 45
- Number
- 10B
- Start Page
- 8430
- End Page
- 8434
- ISSN
- 0021-4922
- Abstract
- SiOx(CH)(y)N-z films were deposited at room temperature using plasma enhanced chemical vapor deposition (PECVD) with a gas mixture of hexamethyldisilazane [HMDS, Si2NH(CH3)(6)]/Ar/N2O. The characteristics of those films with increasing N2O were investigated. When no N2O was used, the film showed organic characteristics with a Si/O composition ratio of 2 and a large concentration of -CHx and N-H in the deposited film. However, with increasing N2O flow rate, oxygen-rich and transparent SiO2-Iike inorganic thin films could be obtained with a Si/O composition ratio of 0.5 and a lower -CHx and N-H in the deposited film. By turning on-and-off the N2O gas flow during SiOx(CH)(y)N-z deposition, a multi-layer thin film consisting of an organic Si(CH)(x)-like film/inorganic SiO2-like thin film, which can be applied to the thin film passivation for organic devices could be successfully deposited.
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