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Atomic layer etching of InP using a low angle forward reflected Ne neutral beam
- Authors
- Park, SD[Park, S. D.]; Oh, CK[Oh, C. K.]; Bae, JW[Bae, J. W.]; Yeom, GY[Yeom, G. Y.]; Kim, TW[Kim, T. W.]; Song, JI[Song, J. I.]; Jang, JH[Jang, J. H.]
- Issue Date
- 24-Jul-2006
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.89, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 89
- Number
- 4
- ISSN
- 0003-6951
- Abstract
- In this study, the atomic layer etching characteristics and the etch mechanism of (100) InP as functions of Cl-2 pressure and Ne neutral beam irradiation dose were investigated. When Cl-2 pressure and Ne neutral beam irradiation dose were lower than the critical values of 0.4 mTorr and 7.2x10(15) at./cm(2) cycle, respectively, the InP etch rate (A/cycle) and the InP surface roughness varied with Cl-2 pressure and Ne neutral beam irradiation dose. However, when the Cl-2 pressure and Ne neutral beam irradiation dose were higher than the critical values, the InP etch rate remained as 1.47 A/cycle, corresponding to one monolayer per cycle, and the surface roughness and the surface stoichiometry remained similar to those of InP before etching. (c) 2006 American Institute of Physics.
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