Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

Wang, Y.Q.[Wang, Y.Q.]; Gao, D.Y.[Gao, D.Y.]; Hwang, W.S.[Hwang, W.S.]; Shen, C.[Shen, C.]; Zhang, G.[Zhang, G.]; Samudra, G.[Samudra, G.]; Yeo, Y.-C.[Yeo, Y.-C.]; Yoo, W.J.[Yoo, W.J.]

doi:10.1109/IEDM.2006.346948

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Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

Authors: Wang, Y.Q.[Wang, Y.Q.]; Gao, D.Y.[Gao, D.Y.]; Hwang, W.S.[Hwang, W.S.]; Shen, C.[Shen, C.]; Zhang, G.[Zhang, G.]; Samudra, G.[Samudra, G.]; Yeo, Y.-C.[Yeo, Y.-C.]; Yoo, W.J.[Yoo, W.J.]

Issue Date: 2006

Citation: Technical Digest - International Electron Devices Meeting, IEDM

Journal Title: Technical Digest - International Electron Devices Meeting, IEDM

URI: https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/87891

DOI: 10.1109/IEDM.2006.346948

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Appears in Collections: SKKU Advanced Institute of Nano Technology > ETC > 1. Journal Articles; Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles

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