CF4-based neutral-beam etch characteristics of Si and SiO 2 using a low-angle forward-reflected neutral-beam etching system

Lee, D.H.[Lee, D.H.]; Park, B.J.[Park, B.J.]; Min, K.S.[Min, K.S.]; Yeom, G.Y.[Yeom, G.Y.]

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CF4-based neutral-beam etch characteristics of Si and SiO 2 using a low-angle forward-reflected neutral-beam etching system

Authors: Lee, D.H.[Lee, D.H.]; Park, B.J.[Park, B.J.]; Min, K.S.[Min, K.S.]; Yeom, G.Y.[Yeom, G.Y.]

Issue Date: 2006

Citation: Journal of the Korean Physical Society, v.49, no.6, pp.2307 - 2310

Journal Title: Journal of the Korean Physical Society

Volume: 49

Number: 6

Start Page: 2307

End Page: 2310

URI: https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/88468

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Appears in Collections: Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles

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