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High performance GOI MISFET with nickel germanide source/ drain using new graded ge condensation method
- Issue Date
- 2006
- Citation
- 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.376 - 377
- Journal Title
- 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
- Volume
- 1
- Start Page
- 376
- End Page
- 377
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Related Researcher
- HONG, BYUNG YOU
- Information and Communication Engineering (Electronic and Electrical Engineering)