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Synthesis and characterization of Ce-doped BZT thin films deposited by a RF magnetron sputtering method

Authors
Choi, WS[Choi, Won Seok]Park, Y[Park, Young]Boo, JH[Boo, Jin-Hyo]Yi, J[Yi, Junsin]Hong, B[Hong, Byungyou]
Issue Date
2006
Publisher
TRANS TECH PUBLICATIONS LTD
Keywords
Ce-doped Ba(ZrxTi1-x)O-3 (BCZT); thin film; ferroelectric materials; RF magnetron sputtering; MLCC (multilayer ceramic capacitor)
Citation
ADVANCED NONDESTRUCTUVE EVALUATION I, PTS 1 AND 2, PROCEEDINGS, v.321-323, pp.1336 - 1339
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED NONDESTRUCTUVE EVALUATION I, PTS 1 AND 2, PROCEEDINGS
Volume
321-323
Start Page
1336
End Page
1339
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/89121
ISSN
1013-9826
Abstract
We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O-3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O-2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O-2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O-2 ratios (5:1, 2: 1, and 1: 1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.
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