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Surface passivation of crystalline silicon wafer using h2 s gasopen access
- Authors
- Lin, J.[Lin, J.]; Jee, H.[Jee, H.]; Yoo, J.[Yoo, J.]; Yi, J.[Yi, J.]; Jeong, C.[Jeong, C.]; Lee, J.[Lee, J.]
- Issue Date
- Apr-2021
- Publisher
- MDPI AG
- Keywords
- Crystalline silicon; Dangling bonds; H2 S; Minority carrier lifetime; Passivation
- Citation
- Applied Sciences (Switzerland), v.11, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Sciences (Switzerland)
- Volume
- 11
- Number
- 8
- ISSN
- 2076-3417
- Abstract
- We report the effects of H2 S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H2 S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 µs) of a c-Si wafer without any passivation treatments was also measured for comparison. The highest minority carrier lifetime gain of 2030% was observed at an annealing temperature of 600◦ C. The X-ray photoelectron spectroscopy analysis revealed that S atoms were bonded to Si atoms after H2 S annealing treatment. This indicates that the increase in minority carrier lifetime originating from the effect of sulfur passivation on the silicon wafer surface involves dangling bonds. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
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Related Researcher
- LEE, JAE HYUNG
- Information and Communication Engineering (Electronic and Electrical Engineering)