Negative Capacitance Transistor with Two-Dimensional Channel Material (Molybdenum disulfide, MoS2)

Abstract

Negative capacitance field effect transistor with two-dimensional channel material (2D-NCFET) has received lots of attention as a steep switching device for low power application. In this work, a P(VDF0.75-TrFE0.25) ferroelectric capacitor is connected in series to the gate electrode of baseline FET with two-dimensional channel material, i.e., molybdenum disulfide (MoS2). With the help of negative capacitance effect in ferroelectric material (herein, notice that the NC effect is physically originated from the polarization switching in ferroelectric material), it is experimentally demonstrated that the 2D-NCFET enables to achieve the sub-60 mV/decade subthreshold swing (SS = 32 mV/decade at 300 K). Note that the SS of baseline FET used for the 2D-NCFET is 110 mV/decade at 300 K.