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Novel driving methods of gate driver circuit for depletion mode oxide TFTs
- Authors
- Oh, J.[Oh, J.]; Jung, K.-M.[Jung, K.-M.]; Lee, S.-Y.[Lee, S.-Y.]; Park, K.[Park, K.]; Jeon, J.-H.[Jeon, J.-H.]; Kim, Y.-S.[Kim, Y.-S.]
- Issue Date
- 2019
- Publisher
- International Display Workshops
- Keywords
- Depletion mode; Gate driver circuit; Reliability; Thin-film transistor; Threshold voltage
- Citation
- Proceedings of the International Display Workshops, v.3, pp.1524 - 1526
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 3
- Start Page
- 1524
- End Page
- 1526
- ISSN
- 1883-2490
- Abstract
- We introduce novel driving methods of pull-down unit in a gate driver circuit for enhancement and depletion mode a-IGZO thin-film transistors (TFTs). Using 3T1C diode connection structure, our circuit can compensate for VTH of pull-down unit in the enhancement mode and can be normally operated in the depletion mode. © 2019 ITE and SID
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Related Researcher
- KIM, YONG SANG
- Information and Communication Engineering (Electronic and Electrical Engineering)