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Reduction of oxide defects in ZrO2/Al2O3/ZrO2 dielectrics by incorporating hydrogen peroxide
- Authors
- Lee, G.[Lee, G.]; Choi, B.[Choi, B.]
- Issue Date
- 2019
- Publisher
- International Display Workshops
- Keywords
- Al2O3; High-N; Hydrogen peroxide; Solution process; ZrO2
- Citation
- Proceedings of the International Display Workshops, v.2, pp.724 - 726
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 2
- Start Page
- 724
- End Page
- 726
- ISSN
- 1883-2490
- Abstract
- Capacitance- and current-voltage characteristics of ZrO2/Al2O3/ZrO2 (ZAZ) capacitors with an addition of hydrogen peroxide (H2O2) were identified. From the results, leakage current and interface trap density of the H2O2-doped devices decreased due to reduction of oxygen vacancies in ZAZ layers. H2O2 effect on the electrical behaviors was qualitatively analyzed. © 2019 ITE and SID.
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Related Researcher
- CHOI, BYOUNG DEOG
- Information and Communication Engineering (Electronic and Electrical Engineering)