Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of fluorine doping on illumination stability of solution-processed IGZO TFTs
- Authors
- Jung, K.-M.[Jung, K.-M.]; Oh, J.[Oh, J.]; Kim, K.-R.[Kim, K.-R.]; Jung, E.K.[Jung, E.K.]; Lee, J.[Lee, J.]; Kim, Y.-S.[Kim, Y.-S.]
- Issue Date
- 2019
- Publisher
- International Display Workshops
- Keywords
- A-IGZO; Fluorine; Oxide semiconductor; Passivation; Thin-film transistors
- Citation
- Proceedings of the International Display Workshops, v.2, pp.545 - 547
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 2
- Start Page
- 545
- End Page
- 547
- ISSN
- 1883-2490
- Abstract
- This study investigated the effect of F doping though NBIS comparison between F-doped and conventional IGZO TFTs. The oxygen vacancies in the IGZO layer were reduced and the bandgap of the IGZO was widened by F doping. As a result of this, the illumination stability of F doped-TFTs was improved. © 2019 ITE and SID.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- KIM, YONG SANG
- Information and Communication Engineering (Electronic and Electrical Engineering)