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A Non-linear Input Converter Inversely Pre-distorted Against Nonlinear Behavior of FG-based Neuromorphic Synaptic Devices

Authors
Hwang, J.-Y.[Hwang, J.-Y.]Kwon, K.-W.[Kwon, K.-W.]
Issue Date
2021
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
CT memory; Floating gate; non-Linearity
Citation
Proceedings - International SoC Design Conference 2021, ISOCC 2021, pp.409 - 410
Indexed
SCOPUS
Journal Title
Proceedings - International SoC Design Conference 2021, ISOCC 2021
Start Page
409
End Page
410
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/95425
DOI
10.1109/ISOCC53507.2021.9614035
ISSN
0000-0000
Abstract
In this paper, we propose a non-linear input converter inversely pre-distorted. In terms of the cell of FG-based neuromorphic synaptic devices, MOSFET read current of nonlinearity problem is caused by two individual inputs(FG weight input voltage). Against non-linear convex output current, concave I-V characteristics of common source amp attributed to its high order terms in low input voltage region improves nonlinearity. To show how much linearizing the nonlinear convex curve of read current, we compare coefficient of determination(R2) of conventional cell, additional cap between FG and Drain of MOSFET in the cell and proposed distorted input amp to cell individually. Briefly, linearity factor(R2) of this work shows 0.99 and this value closes to 1 than other cases. © 2021 IEEE.
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