Two-Dimensional Cold Electron Transport for Steep-Slope Transistors
- Authors
- Liu, MM[Liu, Maomao]; Jaiswal, HN[Jaiswal, Hemendra Nath]; Shahi, S[Shahi, Simran]; Wei, SC[Wei, Sichen]; Fu, Y[Fu, Yu]; Chang, CR[Chang, Chaoran]; Chakravarty, A[Chakravarty, Anindita]; Liu, XC[Liu, Xiaochi]; Yang, C[Yang, Cheng]; Liu, YP[Liu, Yanpeng]; Lee, YH[Lee, Young Hee]; Perebeinos, V[Perebeinos, Vasili]; Yao, F[Yao, Fei]; Li, HM[Li, Huamin]
- Issue Date
- 23-Mar-2021
- Publisher
- AMER CHEMICAL SOC
- Keywords
- graphene; MoS2; Dirac-source; cold electrons; steep-slope transistors; electronic refrigeration
- Citation
- ACS NANO, v.15, no.3, pp.5762 - 5772
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS NANO
- Volume
- 15
- Number
- 3
- Start Page
- 5762
- End Page
- 5772
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/96477
- DOI
- 10.1021/acsnano.1c01503
- ISSN
- 1936-0851
- Abstract
- Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic refrigeration effect with an effective electron temperature of similar to 145 K in the monolayer MoS2, which enables the transport factor lowering and thus the steep-slope switching (across for three decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 mu A/mu m) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the potential of a 2D Dirac-source cold electron transistor as a steep-slope transistor concept for future energy-efficient nanoelectronics.
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Collections - Graduate School > Energy Science > 1. Journal Articles
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