Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode
DC Field | Value | Language |
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dc.contributor.author | Vu, V[Vu, Van Tu] | - |
dc.contributor.author | Phan, TL[Phan, Thanh Luan] | - |
dc.contributor.author | Vu, TTH[Vu, Thi Thanh Huong] | - |
dc.contributor.author | Park, MH[Park, Mi Hyang] | - |
dc.contributor.author | Do, V[Do, Van Dam] | - |
dc.contributor.author | Bui, VQ[Bui, Viet Quoc] | - |
dc.contributor.author | Kim, K[Kim, Kunnyun] | - |
dc.contributor.author | Lee, YH[Lee, Young Hee] | - |
dc.contributor.author | Yu, WJ[Yu, Woo Jong] | - |
dc.date.accessioned | 2022-09-13T00:42:15Z | - |
dc.date.available | 2022-09-13T00:42:15Z | - |
dc.date.created | 2022-09-13 | - |
dc.date.issued | 2022-08 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/98542 | - |
dc.description.abstract | In this study, selective Nb doping (P-type) at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor containing W, Mo, and Nb atoms is proposed. The different chemical activity reactivity (MoO3 > WO3 > Nb2O5) enable the separation of the growth temperature of intrinsic MoS2 to 700 degrees C (first grown inner layer) and Nb-doped WS2 to 800 degrees C (second grown outer layer). By controlling the Nb/(W+Nb) molar ratio in the solution precursor, the hole carrier density in the p-type WS2 layer is selectively controlled from approximately 1.87 x 10(7)/cm(2) at 1.5 at.% Nb to approximately 1.16 x 10(13)/cm(2) at 8.1 at.% Nb, while the electron carrier density in n-type MoS2 shows negligible change with variation of the Nb molar ratio. As a result, the electrical behavior of the WS2-MoS2 heterostructure transforms from the N-N junction (0 at.% Nb) to the P-N junction (4.5 at.% Nb) and the P-N tunnel junction (8.1 at.% Nb). The band-to -band tunneling at the P-N tunnel junction (8.1 at.% Nb) is eliminated by applying negative gate bias, resulting in a maximum rectification ratio (10(5)) and a minimum channel resistance (10(8) omega). With this optimized photodiode (8.1 at.% Nb at V-g = -30 V), an I-photo/I-dark ratio of 6000 and a detectivity of 1.1 x 10(14)Jones are achieved, which are approximately 20 and 3 times higher, respectively, than the previously reported highest values for CVD-grown transition-metal dichalcogenide P-N junctions. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Vu, V[Vu, Van Tu] | - |
dc.contributor.affiliatedAuthor | Phan, TL[Phan, Thanh Luan] | - |
dc.contributor.affiliatedAuthor | Vu, TTH[Vu, Thi Thanh Huong] | - |
dc.contributor.affiliatedAuthor | Park, MH[Park, Mi Hyang] | - |
dc.contributor.affiliatedAuthor | Do, V[Do, Van Dam] | - |
dc.contributor.affiliatedAuthor | Bui, VQ[Bui, Viet Quoc] | - |
dc.contributor.affiliatedAuthor | Lee, YH[Lee, Young Hee] | - |
dc.contributor.affiliatedAuthor | Yu, WJ[Yu, Woo Jong] | - |
dc.identifier.doi | 10.1021/acsnano.2c02242 | - |
dc.identifier.scopusid | 2-s2.0-85136001606 | - |
dc.identifier.wosid | 000835539500001 | - |
dc.identifier.bibliographicCitation | ACS NANO, v.16, no.8, pp.12073 - 12082 | - |
dc.relation.isPartOf | ACS NANO | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 16 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 12073 | - |
dc.citation.endPage | 12082 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordAuthor | one-step synthesis | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | transition-metal dichalcogenide lateral heterostructure | - |
dc.subject.keywordAuthor | selective doping control | - |
dc.subject.keywordAuthor | photodiode | - |
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