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Semiconductor Science and Technology

Journal Title

  • Semiconductor Science and Technology

ISSN

  • E 1361-6641 | P 0268-1242 | 1361-6641 | 0268-1242

Publisher

  • Institute of Physics Publishing
  • IOP

Listed on(Coverage)

JCR1997-2019
SJR1999-2019
CiteScore2011-2019
SCI2010-2019
SCIE2010-2021
CC2016-2021
SCOPUS2017-2020

Active

  • Active

    based on the information

    • SCOPUS:2020-10

Country

  • ENGLAND

Aime & Scopes

  • Devoted to semiconductor research, Semiconductor Science and Technology's multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: /// fundamental properties /// materials and nanostructures /// devices and applications /// fabrication and processing /// new analytical techniques /// emerging fields: ◦quantum materials ◦materials and devices for quantum computing ◦topological semiconductors ◦heterogeneous layered materials, 2d heterostructures ◦metamaterials ◦nanowires ◦semiconductors for energy ◦flexible electronics

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Article List

1 - 20 out of 44 results.

SCIESCOPUS
Performance analysis and yield estimation for a negative capacitance field effect transistor-based eight-transistor static random access memory

Hong, Y.[Hong, Y.]; Han, C.[Han, C.]; Shin, C.[Shin, C.]

ArticleIssue Date2021CitationSemiconductor Science and Technology, v.36, no.9PublisherIOP Publishing Ltd
SCIESCOPUS
FBFET (feedback field-effect transistor)-based oscillator for neuromorphic computing

Lee, C[Lee, Changhoon]; Shin, C[Shin, Changhwan]

ArticleIssue Date2021CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.3PublisherIOP PUBLISHING LTD
SCIESCOPUS
Quantitative evaluation of process-induced line-edge roughness in FinFET: Bayesian regression model

Yu, S[Yu, Sangho]; Shin, C[Shin, Changhwan]

ArticleIssue Date2021CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.2PublisherIOP PUBLISHING LTD
SCIESCOPUS
Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si:HfO2-based ferroelectric capacitor

Jung, T[Jung, Taehwan]; MIN, S. J.[MIN, SHIN JAE]; Shin, C[Shin, Changhwan]

ArticleIssue Date2021CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.1PublisherIOP PUBLISHING LTD
SCIESCOPUS
Photo-responsive MoS2/organic-rubrene heterojunction field-effect-transistor: application to photo-triggered ternary inverter

Park, CJ[Park, Cheol-Joon]; Park, HJ[Park, Hyeon Jung]; Kim, JY[Kim, Jun Young]; Lee, SH[Lee, Sang-Hun]; Lee, Y[Lee, Yongjun]; Kim, J[Kim, Jeongyong]; Joo, J[Joo, Jinsoo]

ArticleIssue Date2020CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.6PublisherIOP PUBLISHING LTD
SCIESCOPUS
Compact model for PZT ferroelectric capacitors with voltage dependent switching behavior

Wang, CW[Wang, Chien-Wei]; Ku, H[Ku, Hansol]; Chiu, CY[Chiu, Cheng Yan]; De, S[De, Sourav]; Qiu, BH[Qiu, Bo-Han]; Shin, C[Shin, Changhwan]; Lu, D[Lu, Darsen]

ArticleIssue Date2020CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.5PublisherIOP PUBLISHING LTD
SCIESCOPUS
Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WOx contacts in silicon heterojunction solar cells

Tran, TA[Tuan Anh Tran]; Trinh, TT[Thanh Thuy Trinh]; Viet, TD[Truong Doan Viet]; Ngoc, LV[Le Van Ngoc]; Do, HB[Huy Binh Do]; Giang, NTT[Ngo Thi Thanh Giang]; Kim, S[Kim, Sangho]; Pham, DP[Duy Phong Pham]; Yi, J[Yi, Junsin]; Dao, VA[Vinh-Ai Dao]

ArticleIssue Date2020CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.4PublisherIOP PUBLISHING LTD
SCIESCOPUS
Temperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor

Moon, BH[Moon, Byoung Hee]; Ji, H[Ji, Hyunjin]; Bae, JJ[Bae, Jung Jun]; Lee, YH[Lee, Young Hee]

ArticleIssue Date2020CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.3PublisherIOP PUBLISHING LTD
SCIESCOPUS
Device design guideline for junctionless gate-all-around nanowire negative-capacitance FET with HfO2-based ferroelectric gate stack

Choi, Y[Choi, Yejoo]; Hong, Y[Hong, Yuri]; Shin, C[Shin, Changhwan]

ArticleIssue Date2020CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.1PublisherIOP PUBLISHING LTD
SCIESCOPUS
Study of work-function variation in stacked multiple-channel-structure device

Park, J[Park, Jaesoo]; Shin, C[Shin, Changhwan]

ArticleIssue Date2019CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.12PublisherIOP PUBLISHING LTD
SCIESCOPUS
Electrical properties of the HfO2/Al2O3 dielectrics stacked using single- And dual-temperature atomic-layer deposition processes on In0.53Ga0.47As

Lee, C.[Lee, C.]; Choi, S.[Choi, S.]; An, Y.[An, Y.]; An, B.-S.[An, B.-S.]; Lee, W.[Lee, W.]; Oh, W.[Oh, W.]; Eom, D.[Eom, D.]; Lee, J.[Lee, J.]; Yang, C.-W.[Yang, C.-W.]; Kim, H.[Kim, H.]

ArticleIssue Date2019CitationSemiconductor Science and Technology, v.34, no.10PublisherInstitute of Physics Publishing
SCIESCOPUS
Improvement of the storage ability of Si-rich oxide layer in poly-Si based nonvolatile memory devices by implementation of taguchi method

Nguyen, C.P.T.[Nguyen, C.P.T.]; Manh, T.D.[Manh, T.D.]; Le, A.H.T.[Le, A.H.T.]; Shin, D.[Shin, D.]; Kim, Y.[Kim, Y.]; Dao, V.A.[Dao, V.A.]; Yi, J.[Yi, J.]

ArticleIssue Date2019CitationSemiconductor Science and Technology, v.34, no.9PublisherInstitute of Physics Publishing
SCIESCOPUS
Ultrathin flexible thin film transistors with CYTOP encapsulation by debonding process

Kim, JM[Kim, Jae Moon]; Oh, J[Oh, Jongsu]; Jung, KM[Jung, Kyung-Mo]; Park, K[Park, KeeChan]; Jeon, JH[Jeon, Jae-Hong]; Kim, YS[Kim, Yong-Sang]

ArticleIssue Date2019CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.7PublisherIOP PUBLISHING LTD
SCIESCOPUS
Experimental understanding of polarization switching in PZT ferroelectric capacitor

Shin, CW[Shin, Changhwan]

ArticleIssue Date2019CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.7PublisherIOP PUBLISHING LTD
SCIESCOPUS
a-Si:H TFT-based gate driver circuit using Q node as both pull-up and hold-down controller

Oh, J[Oh, Jongsu]; Kim, JH[Kim, Jin-Ho]; Jung, KM[Jung, Kyung-Mo]; Kim, HE[Kim, Hyo Eun]; Kim, KR[Kim, Kyoung-Rae]; Park, K[Park, KeeChan]; Jeon, JH[Jeon, Jae-Hong]; Kim, YS[Kim, Yong-Sang]

ArticleIssue Date2019CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.6PublisherIOP PUBLISHING LTD
SCIESCOPUS
The recorded open-circuit voltage and fill factor achievement of a-Si:H p-i-n/HIT-type tandem solar cells by tuning up the crystalline in tunneling recombination junction layer

Kim, S[Kim, Sangho]; Dao, VA[Vinh Ai Dao]; Trinh, TT[Thanh Thuy Trinh]; Phong, PD[Pham Duy Phong]; Park, J[Park, Jinjoo]; Thu, VTH[Vu Thi Hanh Thu]; Thuy, NN[Nguyen Thuy Ngoc Thuy]; Giang, NTT[Ngo Thi Thanh Giang]; Lee, S[Lee, Sunhwa]; Yi, J[Yi, Junsin]

ArticleIssue Date2019CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.6PublisherIOP PUBLISHING LTD
SCIESCOPUS
DIBL improvement in hysteresis-free and ferroelectric-gated FinFETs

Shin, J[Shin, Jaemin]; Shin, C[Shin, Changhwan]

ArticleIssue Date2019CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.6PublisherIOP PUBLISHING LTD
SCIESCOPUS
DIBL enhancement in ferroelectric-gated FinFET

Cho, H[Cho, Hyungki]; Shin, C[Shin, Changhwan]

ArticleIssue Date2019CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.2PublisherIOP PUBLISHING LTD
SCIESCOPUS
Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memory characteristics in p-channel LTPS NVM devices with ONO structure

Jang, K[Jang, Kyungsoo]; Lee, S[Lee, Sojin]; Nguyen, TCP[Thi Cam Phu Nguyen]; Park, H[Park, Heejun]; Kim, J[Kim, Jungsoo]; Shin, D[Shin, Donggi]; Lee, YJ[Lee, Youn-Jung]; Kim, Y[Kim, Youngkuk]; Yi, J[Yi, Junsin]

ArticleIssue Date2018CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.33, no.12PublisherIOP PUBLISHING LTD
SCIESCOPUS
The effect of double doped nc-Si:H tunnel recombination junction in a-Si:H/c-Si tandem solar cells

Lee S.[Lee S.]; Park J.[Park J.]; Kim S.[Kim S.]; Kim Y.[Kim Y.]; Jeong C.[Jeong C.]; Yi J.[Yi J.]

ArticleIssue Date2018CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.33, no.7PublisherIOP PUBLISHING LTD
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