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A-IGZO TFT based operational amplifier and comparator circuits for the adaptive DC-DC converter

Authors
Kim, K.Choi, K.-Y.Choi, D.-H.Lee, H.
Issue Date
2014
Publisher
Blackwell Publishing Ltd
Keywords
a-InGaZnO; dc-dc converter; operational amplifier (op-amp); oxide transistor; pulse-width-modulation (PWM), comparator; thin-film transistor (TFT)
Citation
Digest of Technical Papers - SID International Symposium, v.45, no.1, pp.1164 - 1167
Journal Title
Digest of Technical Papers - SID International Symposium
Volume
45
Number
1
Start Page
1164
End Page
1167
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/10970
DOI
10.1002/j.2168-0159.2014.tb00303.x
ISSN
0097-966X
Abstract
In this paper, we present an operational amplifier (op-amp) based on amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (a-InGaZnO TFTs) to achieve a comparator operated by pulse-width-modulation (PWM) control-loop structure, which can be used for dc-dc converter circuits integrated in the display driving system. Based on electrical characteristics of the fabricated a-InGaZnO TFT, we proposed a novel NMOS op-amp to achieve the overall gain of 19.2dB. On the basis of the proposed op-amp, we fabricated a-InGaZnO TFT comparator circuit, which could successfully operate at 100 Hz to control the duty ratio from 25% to 75% with the slew rate of 0.625V/μs. © 2014 Society for Information Display.
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