A Pedagogical Perspective on Ambipolar FETs
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Moon Sung | - |
dc.contributor.author | Frisbie, C. Daniel | - |
dc.date.available | 2018-05-09T14:07:39Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2013-06-03 | - |
dc.identifier.issn | 1439-4235 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/11248 | - |
dc.description.abstract | The operation of an ambipolar field-effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor-operation regimes and the resulting currentvoltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light-emitting transistor operation, and a correct method to extract electron and hole mobilities from a given currentvoltage curve are presented. | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | CHEMPHYSCHEM | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | LIGHT-EMITTING TRANSISTORS | - |
dc.subject | TRANSPORT | - |
dc.subject | EMISSION | - |
dc.subject | CHANNEL | - |
dc.title | A Pedagogical Perspective on Ambipolar FETs | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/cphc.201300014 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CHEMPHYSCHEM, v.14, no.8, pp.1547 - 1552 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000319415900003 | - |
dc.identifier.scopusid | 2-s2.0-84878203735 | - |
dc.citation.endPage | 1552 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1547 | - |
dc.citation.title | CHEMPHYSCHEM | - |
dc.citation.volume | 14 | - |
dc.contributor.affiliatedAuthor | Kang, Moon Sung | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | ambipolar field-effect transistors | - |
dc.subject.keywordAuthor | channel potential | - |
dc.subject.keywordAuthor | charge carriers | - |
dc.subject.keywordAuthor | currentvoltage characteristics | - |
dc.subject.keywordAuthor | transistor operation regime | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LIGHT-EMITTING TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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