Study of the inter-stage capacitor effects of a RF CMOS power amplifier to enhance its efficiency
- Authors
- Hwang, H.; Seo, D.; Park, J.; Park, C.
- Issue Date
- 2013
- Citation
- Progress In Electromagnetics Research C, v.37, pp.29 - 40
- Journal Title
- Progress In Electromagnetics Research C
- Volume
- 37
- Start Page
- 29
- End Page
- 40
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/12144
- ISSN
- 1937-8718
- Abstract
- In this work, we analyze the effects of an inter-stage capacitor located between the power stage input and the driver stage output on the overall efficiency of a RF CMOS power amplifier and on gate-drain reliability problems. To verify the analyzed effects, we designed a RF CMOS power amplifier with a center frequency of 1.85- GHz. Class-D amplifiers with a feedback resistor are used as driver stages, and a class-E amplifier is used as the power stage. A distributed active transformer is adapted for use in the output power combiner for high efficiency. The inter-stage capacitor between driver and the power stage is removed to enhance the switching operation of the power stage. By eliminating the inter-stage capacitor, the supply voltage of the driver stage can be decreased compared to that in a general amplifier. Accordingly, the power-added efficiency is improved and the gate-drain reliability problems are moderated compared to a general amplifier. The analyzed effect of the inter-stage capacitor is verified successfully using the measured results of the designed amplifiers.
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