Gallium nitride nanostructures for light-emitting diode applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Moon Sung | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Park, Jun Beom | - |
dc.contributor.author | Yoo, Hyobin | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.available | 2018-05-10T05:20:14Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/12433 | - |
dc.description.abstract | This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures. (C) 2012 Elsevier Ltd. All rights reserved. | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | NANO ENERGY | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | ALLOYED OHMIC CONTACTS | - |
dc.subject | DOPED GAN FILMS | - |
dc.subject | LASER LIFT-OFF | - |
dc.subject | P-TYPE GAN | - |
dc.subject | NANOWIRE GROWTH | - |
dc.subject | NANOROD ARRAYS | - |
dc.subject | QUANTUM CONFINEMENT | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | DESIGN PRINCIPLES | - |
dc.title | Gallium nitride nanostructures for light-emitting diode applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.nanoen.2012.03.005 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANO ENERGY, v.1, no.3, pp.391 - 400 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000318050200009 | - |
dc.identifier.scopusid | 2-s2.0-84860430552 | - |
dc.citation.endPage | 400 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 391 | - |
dc.citation.title | NANO ENERGY | - |
dc.citation.volume | 1 | - |
dc.contributor.affiliatedAuthor | Kang, Moon Sung | - |
dc.type.docType | Review | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Light-emitting diodes | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | ALLOYED OHMIC CONTACTS | - |
dc.subject.keywordPlus | DOPED GAN FILMS | - |
dc.subject.keywordPlus | LASER LIFT-OFF | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | NANOWIRE GROWTH | - |
dc.subject.keywordPlus | NANOROD ARRAYS | - |
dc.subject.keywordPlus | QUANTUM CONFINEMENT | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | DESIGN PRINCIPLES | - |
dc.description.journalRegisteredClass | scopus | - |
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